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Precision Supplies for Australia’s Critical Environments
WIDE BANDGAP & COMPOUND SEMICONDUCTORS
NanoFort Group provides high-performance wide bandgap (WBG) and III-V compound semiconductor substrates specifically engineered for the most demanding next-generation power electronics, high-frequency RF applications, and advanced optoelectronics. These materials represent a significant leap in semiconductor technology, offering vastly superior thermal conductivity, significantly higher breakdown voltages, and faster electron mobility when compared to traditional silicon-based substrates.
By utilizing these advanced properties, our substrates enable the development of smaller, faster, and more efficient components that can operate reliably under extreme temperatures and high-voltage conditions. This makes them the definitive industry standard for critical infrastructure and emerging technologies, including electric vehicle (EV) powertrains, 5G telecommunications networks, and sophisticated aerospace systems. We work closely with leading global foundries to ensure that our SiC, GaN, and GaAs materials meet the stringent purity and crystalline quality standards required to push the boundaries of modern power density and signal integrity.
VARIOUS OPTIONS & CUSTOMIZATION
We collaborate directly with manufacturers to offer extensive customization for our compound semiconductor range. Contact our team today to discuss how we can tailor these high-performance substrates to meet your specific project requirements.
ADVANCED COMPOUND SUBSTRATES
Silicon Carbide Wafers (SiC)
- Polytypes: Available in 4H-SiC and 6H-SiC with high crystalline quality.
- Grades: Offered in Semi-insulating (SI) for RF applications and N-type (Conductive) for power devices.
- Performance: Features high thermal conductivity and wide bandgap (3.26 eV), ideal for high-temperature and high-voltage environments.
- Applications: Power inverters, EV charging systems, and industrial motor drives.
III-V Compound Semiconductors (GaN & GaAs)
- Structure & Quality: We provide high-quality Gallium Nitride (GaN) epitaxial layers grown on Silicon or Sapphire substrates, alongside Prime grade Gallium Arsenide (GaAs) featuring ultra-low Etch Pit Density (EPD).
- Key Features: These materials offer exceptional electron mobility, high power density, and semi-insulating or N-type grades to support both microwave circuits and optoelectronic designs.
- Applications: Essential for 5G base stations, radar systems, high-efficiency LED production, laser diodes, and high-speed wireless communication components.